for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 1 HMC716LP3 / 716lp3e gaas phemt mmic low noise amplifier, 3.1 - 3.9 ghz v02.1009 general description features functional diagram the h m c716 lp 3( e ) is a gaas ph em t mmi c l ow noise amplifer that is ideal for fxed wireless and l t e / w i m ax/4g basestation front-end receivers operating between 3.1 and 3.9 ghz. the amplifer has been optimized to provide 1 db noise fgure, 18 db gain and +33 dbm output ip 3 from a single supply of +5v. i nput and output return losses are excellent and the l na requires minimal external matching and bias decoupling components. the h m c716 lp 3( e ) can be biased with +3v to +5v and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the l na for each application. noise f igure: 1 db gain: 18 db o utput ip 3: +33 dbm s ingle s upply: +3v to +5v 50 o hm m atched i nput/ o utput 16 l ead 3x3mm q fn p ackage: 9 mm 2 typical applications the h m c716 lp 3( e ) is ideal for: ? f ixed w ireless and l t e / w i m ax/4g ? bt s & i nfrastructure ? r epeaters and f emtocells ? p ublic s afety r adio ? access p oints electrical specifcations t a = +25 c, rbias = 820 for vdd = 5v, rbias = 47k for vdd = 3v [1] p arameter vdd = +3v vdd = +5v units m in. typ. m ax. m in. typ. m ax. f requency r ange 3.1 - 3.9 3.1 - 3.9 m hz gain 13 17 15.5 18 db gain variation o ver temperature 0.01 0.01 db/ c noise f igure 1 1.3 1 1.3 db i nput r eturn l oss 25 30 db o utput r eturn l oss 13 16 db o utput p ower for 1 db compression ( p 1db) 12 15 16 19 dbm s aturated o utput p ower ( p sat) 16.5 20.5 dbm o utput third o rder i ntercept ( ip 3) 26 33 dbm s upply current ( i dd) 41 55 65 90 ma [1] r bias resistor sets current, see application circuit herein
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 2 input return loss vs. temperature [1] output return loss vs. temperature [1] broadband gain & return loss [1] [2] -40 -30 -20 -10 0 10 20 30 1 2 3 4 5 6 7 8 5v 3v frequency (ghz) response (db) s11 s21 s22 -40 -30 -20 -10 0 3 3.2 3.4 3.6 3.8 4 +25c +85c -40c frequency (ghz) return loss (db) -25 -20 -15 -10 -5 0 3 3.2 3.4 3.6 3.8 4 +25c +85c -40c frequency (ghz) return loss (db) HMC716LP3 / 716lp3e v02.1009 gaas phemt mmic low noise amplifier, 3.1 - 3.9 ghz [1] vdd = 5v, r bias = 820 [2] vdd = 3v, r bias = 47k gain vs. temperature [2] 12 14 16 18 20 22 24 26 3 3.2 3.4 3.6 3.8 4 +25c +85c -40c frequency (ghz) gain (db) gain vs. temperature [1] 12 14 16 18 20 22 24 26 3 3.2 3.4 3.6 3.8 4 +25c +85c -40c frequency (ghz) gain (db) reverse isolation vs. temperature [1] -45 -40 -35 -30 -25 -20 -15 3 3.2 3.4 3.6 3.8 4 +25c +85c -40c frequency (ghz) isolation (db)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 3 p1db vs. temperature [1] [2] psat vs. temperature [1] [2] 9 12 15 18 21 24 3 3.2 3.4 3.6 3.8 4 +25c +85c -40c frequency (ghz) psat (dbm) vdd=5v vdd=3v 9 12 15 18 21 24 3 3.2 3.4 3.6 3.8 4 +25c +85c -40c frequency (ghz) p1db (dbm) vdd=5v vdd=3v HMC716LP3 / 716lp3e v02.1009 gaas phemt mmic low noise amplifier, 3.1 - 3.9 ghz output ip3 and supply current vs. supply voltage @ 3300 mhz [3] [1] vdd = 5v, r bias = 820 [2] vdd = 3v, r bias = 47k [3] r bias = 820 for vdd = 5v, r bias = 47k for vdd = 3v [4] m easurement reference plane shown on evaluation p cb drawing. output ip3 vs. temperature [1] [2] 21 25 29 33 37 41 45 3 3.2 3.4 3.6 3.8 4 +25c +85c -40c frequency (ghz) ip3 (dbm) vdd=5v vdd=3v 24 26 28 30 32 34 36 5 20 35 50 65 80 95 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 ip3 (dbm) idd (ma) voltage supply (v) idd ip3 noise figure vs. temperature [1] [2] [4] 0 0.3 0.6 0.9 1.2 1.5 1.8 3 3.2 3.4 3.6 3.8 4 vdd=5v vdd=3v frequency (ghz) noise figure (db) +85c +25c -40c output ip3 and supply current vs. supply voltage @ 3800 mhz [3] 24 26 28 30 32 34 36 5 20 35 50 65 80 95 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 ip3 (dbm) idd (ma) voltage supply (v) idd ip3
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 4 power compression @ 3300 mhz [1] -10 -5 0 5 10 15 20 25 30 35 -20 -16 -12 -8 -4 0 4 8 pout gain pae input power (dbm) pout (dbm), gain (db), pae (%) HMC716LP3 / 716lp3e v02.1009 gaas phemt mmic low noise amplifier, 3.1 - 3.9 ghz -10 -4 2 8 14 20 26 32 -20 -15 -10 -5 0 5 pout gain pae input power (dbm) pout (dbm), gain (db), pae (%) power compression @ 3800 mhz [2] power compression @ 3300 mhz [1] -5 0 5 10 15 20 25 30 35 40 -20 -15 -10 -5 0 5 pout gain pae input power (dbm) pout (dbm), gain (db), pae (%) -5 0 5 10 15 20 25 30 35 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 pout gain pae input power (dbm) pout (dbm), gain (db), pae (%) power compression @ 3300 mhz [2] [1] vdd = 5v, r bias = 820 [2] vdd = 3v, r bias = 47k [3] r bias = 820 for vdd = 5v, r bias = 47k for vdd 3v gain, power & noise figure vs. supply voltage @ 3300 mhz [3] 12 14 16 18 20 22 24 0.8 0.9 1 1.1 1.2 1.3 1.4 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 p1db gain nf gain (db) & p1db (dbm) noise figure (db) voltage supply (v) gain, power & noise figure vs. supply voltage @ 3800 mhz [3] 11 13 15 17 19 21 23 0.8 0.9 1 1.1 1.2 1.3 1.4 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 p1db gain nf gain (db) & p1db (dbm) noise figure (db) voltage supply (v)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 5 HMC716LP3 / 716lp3e v02.1009 gaas phemt mmic low noise amplifier, 3.1 - 3.9 ghz output ip3 vs. rbias @ 3800 mhz 20 24 28 32 36 40 100 1000 10000 100000 vdd=3v vdd=5v rbias (ohms) ip3 (dbm) gain, noise figure & rbias @ 3800 mhz output ip3 vs. rbias @ 3300 mhz 20 24 28 32 36 40 100 1000 10000 100000 vdd=3v vdd=5v rbias (ohms) ip3 (dbm) gain, noise figure & rbias @ 3300 mhz 8 10 12 14 16 18 20 0.95 1 1.05 1.1 1.15 1.2 1.25 100 1000 10000 100000 vdd=3v vdd=5v gain (db) noise figure (db) rbias (ohms) 10 12 14 16 18 20 22 1 1.05 1.1 1.15 1.2 1.25 1.3 100 1000 10000 100000 vdd=3v vdd=5v gain (db) noise figure (db) rbias (ohms)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 6 absolute maximum ratings drain bias voltage (vdd) +5.5v rf input p ower ( rfin) (vdd = +5 vdc) +10 dbm channel temperature 150 c continuous pdiss (t= 85 c) (derate 11.1 m w /c above 85 c) 0.72 w thermal r esistance (channel to ground paddle) 90 c/w s torage temperature -65 to +150 c o perating temperature -40 to +85 c esd s ensitivity (hbm) class 1a ele ct ros tat ic se n si t i v e de v ic e o b ser v e hand li ng pre caut io n s vdd (v) idd (ma) 2.7 31 3.0 41 3.3 51 4.5 51 5.0 65 5.5 80 note: amplifer will operate over full voltage ranges shown above. typical supply current vs. supply voltage (rbias = 820 for vdd = 5v, rbias = 47k for vdd = 3v) vdd (v) rbias () idd (ma) min max r ecommended 3v 2k [1] o pen circuit 2.2k 20 5.6k 30 47k 41 5v 0 o pen circuit 270 48 820 65 2.2k 81 [1] w ith vdd= 3v and rbias < 2k may result in the part becoming conditionally stable which is not recommended. absolute bias resistor range & recommended bias resistor values HMC716LP3 / 716lp3e v02.1009 gaas phemt mmic low noise amplifier, 3.1 - 3.9 ghz
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 7 outline drawing p art number p ackage body m aterial l ead f inish msl r ating p ackage m arking [3] h m c716 lp 3 l ow s tress i njection m olded p lastic s n/ p b s older msl 1 [1] 716 xxxx h m c716 lp 3 e r oh s -compliant l ow s tress i njection m olded p lastic 100% matte s n msl 1 [2] 716 xxxx [1] m ax peak refow temperature of 235 c [2] m ax peak refow temperature of 260 c [3] 4-digit lot number xxxx n ot es : 1. le ad fr a me m at eri a l : c opper a llo y 2. d ime n sio n s a re i n i nch es [ millime t ers ] 3. le ad sp ac i ng t oler anc e is n o n-cu m u l at i v e 4. p ad bu rr le ngth s ha ll b e 0.15mm m ax im u m . p ad bu rr h ei ght s ha ll b e 0.05mm m ax im u m . 5. p ackag e w a rp s ha ll n ot e xc ee d 0.05mm. 6. a ll g ro und le ad s and g ro und p add le m u s t b e sol d ere d to p cb rf g ro und. 7. refer to h i tt i t e a ppli cat io n n ot e for s ugg es t e d l and p att er n. package information HMC716LP3 / 716lp3e v02.1009 gaas phemt mmic low noise amplifier, 3.1 - 3.9 ghz
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 8 pin number f unction description i nterface schematic 1, 3 - 7, 9, 10, 12 - 14, 16 n/c the pins are not connected internally; however, all data shown herein was measured with these pins connected to rf /dc ground externally. 2 rfin this pin is dc coupled. an off chip dc blocking capacitor is required. 11 rfout this pin is ac coupled and matched to 50 o hms. 8 res this pin is used to set the dc current of the amplifer by selection of external bias resistor. s ee application circuit. 15 vdd p ower supply voltage. bypass capacitors are required. s ee application circuit. gnd ground paddle must be connected to rf /dc ground. pin descriptions HMC716LP3 / 716lp3e v02.1009 gaas phemt mmic low noise amplifier, 3.1 - 3.9 ghz
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 9 application circuit HMC716LP3 / 716lp3e v02.1009 gaas phemt mmic low noise amplifier, 3.1 - 3.9 ghz
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 10 evaluation pcb i tem description j1, j2 p cb m ount sm a connector j3, j4 dc p in c1 10 n f capacitor, 0402 p kg. c2 1000 p f capacitor, 0603 p kg. c3 0.47 f capacitor, 0603 p kg. c4 100 p f capacitor, 0402 p kg. r 1 820 r esistor, 0402 p kg. r 2 0 o hm r esistor, 0402 p kg. u1 h m c716 lp 3( e ) amplifer p cb [2] 122490 e valuation p cb [1] r eference this number when ordering complete evaluation p cb [2] circuit board m aterial: r ogers 4350 or arlon 25 fr list of materials for evaluation pcb 122540 [1] the circuit board used in this application should use rf circuit design techniques. s ignal lines should have 50 o hm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. a sufficient number of via holes should be used to connect the top and bottom ground planes. the evaluation board should be mounted to an appro - priate heat sink. the evaluation circuit board shown is available from hittite upon request. HMC716LP3 / 716lp3e v02.1009 gaas phemt mmic low noise amplifier, 3.1 - 3.9 ghz
|
